Note though that the footprint of this device is very much reduced (15 × 3 × 0.5 mm 3). The benefit of the IDE structure is a smaller capacitance than MIM (120 pF for each capacitor in this case), which therefore leads to much lower power consumption, namely, 75 mW per actuator (at 150 V unipolar = 92 V rms). 16 The device exhibited a Lamb mode at 73 kHz and an out-of-plane peak-to-peak displacement of 3 μm at 150 V unipolar. demonstrated a transparent haptic device based on a PZT thin film and ITO interdigitated (IDE) electrodes on fused silica glass. This represents a 15-fold consumption reduction with respect to the same haptic device made with 0.5 μm-thick PZT thin films.Įfforts have nonetheless been devoted to developing power-efficient devices. At the limit of touch detection (1 μm out of plane deflection), the power consumption of the haptic device is 150 mW at 40 V. Our fabricated haptic device containing three actuators connected in series exhibits an antisymmetric Lamb wave resonant mode at 62.0 kHz, in line with finite element modeling.

They are dense and exhibit a permittivity of 1000 and dielectric loss lower than 0.05. These thick films are made of a PZT composite slurry associated with sol-gel sol infiltration.

To solve this issue, we developed haptic devices based on a 10 μm-thick PZT film deposited on a 0.65 mm-thick platinized silicon substrate. The thickness of thin films is limited to 2 μm, leading to large capacitance and, thus, too high-power consumption. Thin-film actuators with metal–insulator–metal structure have been developed to directly integrate actuators on haptic plates. The standard solution is based on stand-alone bulk ceramics glued directly on the haptic device. Emerging haptic technology based on piezoelectric actuators enables to realize innovative tactile human–machine interface.

Piezo haptic